CHAPTER FOUR Semiconductor Membrane Lasers and Photodiode on Si Shigehisa Arai 1 , Tomohiro Amemiya 1 Institute of Innovative Research (IIR), Tokyo Institute of Technology, Tokyo, Japan 1 Corresponding authors: e-mail address: arai@pe.titech.ac.jp; amemiya.t.ab@m.titech.ac.jp Contents 1. Introduction 71 2. Semiconductor Membrane Lasers for Low Power Operation 74 3. Energy Cost Analysis of Membrane DR Lasers 76 4. Membrane DFB and DR Lasers on Si 79 4.1 Fabrication Process 80 4.2 Static Lasing Properties 82 4.3 Direct Modulation Properties 84 5. Membrane PD on Si 86 6. Integrated Membrane DFB Laser and p-i-n PD 88 7. Summary 91 References 91 1. INTRODUCTION GaInAsP/InP long-wavelength (1.5–1.6 μm) lasers have been widely used in long-distance optical fiber communications and monolithic integra- tion of these lasers with other functional devices such as electroabsorption modulators and/or monitoring photodiodes (PDs), multiple wavelength laser arrays, and wavelength tunable lasers integrated with microheaters has been widely used in practical systems. Recently, hybrid integration of many functional photonic components including active photonic devices is in progress for cost-effective production of compact photonic integrated circuits (PICs) (Heck et al., 2011, 2013). On the other hand, short- reach (a few meters to a few kilometers) optical fiber communications, which consist of a huge number (several tens of thousands to several Semiconductors and Semimetals, Volume 99 # 2018 Elsevier Inc. ISSN 0080-8784 All rights reserved. https://doi.org/10.1016/bs.semsem.2018.07.002 71