Citation: Syed, S.A.; Khalid, H.A.; Farooq, H. Analytical and Simulation Comparison of Losses in Non-Isolated DC/DC Converter Using Si and SiC Switches for PV Application. Eng. Proc. 2022, 20, 11. https://doi.org/10.3390/ engproc2022020011 Academic Editor: Saad Ahmed Qazi Published: 28 July 2022 Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affil- iations. Copyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/). Proceeding Paper Analytical and Simulation Comparison of Losses in Non-Isolated DC/DC Converter Using Si and SiC Switches for PV Application † Saqib Ali Syed *, Hassan Abdullah Khalid and Hasaan Farooq Department Electrical Power Engineering, U.S.-Pakistan Center for Advanced Studies in Energy (USPCAS-E), National University of Sciences and Technology, Sector H-12, Islamabad 44000, Pakistan; hakhalid@uspacse.nust.edu.pk (H.A.K.); farooqhasaan@gmail.com (H.F.) * Correspondence: syedsaqib772@gmail.com † Presented at the 7th International Electrical Engineering Conference, Karachi, Pakistan, 25–26 March 2022. Abstract: With the growth of renewable energy sources around the world, the demand for cost- effective and efficient converters that can operate at high frequency and have less switching and conduction loss has grown. High efficiency is one of the most difficult goals to attain in power electronic converters. Wideband switches can be used to achieve this purpose, although they add to the system’s cost. In this paper, a comparison between SiC MOSFET and Si MOSFET switches was carried out for a 3 KW I-IIB Buck-boost/Boost non-isolated reduced redundant converter for the photovoltaic system with a wide input voltage range. Mathematical calculations were used to investigate switching and conduction losses, and software simulations in PSIM were used to verify their authenticity. In high-frequency power applications, the results suggest that SiC MOSFET can work more efficiently than Si MOSFET. Si MOSFETs, on the other hand, are still preferred for small voltage and low power applications due to their lower costs. Keywords: non-isolated DC/DC converter; photovoltaic system; switching losses; wide input voltage range; SiC MOSFET; Si MOSFET 1. Introduction Renewable energy sources are rapidly used all around the world due to its plentiful, environment-friendly, and broadly distributed nature. Renewable energy sources, specif- ically solar energy, have gained more attention and become the most important source to meet energy challenges. The energy produced from PV systems is non-linear because the magnitude of voltage and current coming from PV varies due to weather conditions such as temperature and solar irradiance. Thus, these systems require converters that will provide a constant output, be able to work with a wide input voltage range, possess a high power range, and have high efficiency. In renewable energy sources specifically for photovoltaics systems, DC/DC converters have more significance and play a vital role. Due to the non-linear behavior of PV systems, DC/DC converters are necessary for them. The basic goal of a DC/DC converter is to provide smooth and constant output voltage with great efficiency regardless of the input voltage generated by PV panels [1,2]. In the selection and design of converters, efficiency is a critical consideration. Most commercially available converters are constructed on silicon devices. Switching devices play important role in converter designing. There are two types of switching devices SiC and Si MOSFETs mainly used for power converters. Si MOSFETs are widely used as switching devices due to their low cost but SiC MOSFETs have gained more attention in the last few years due to their high efficiency, ability to work with high temperature and frequency, and high-power density [3]. Hence, the loss analysis of switching devices should be evaluated for converters and accompanies the low switching loss device. Eng. Proc. 2022, 20, 11. https://doi.org/10.3390/engproc2022020011 https://www.mdpi.com/journal/engproc