ORIGINAL PAPER Study of transition kinetics of Se 80 Te 202x In x chalcogenide glasses Ibrahim Hasan Afify 1 *, M S Abo-Ghazala 2 , M M El-Zaidia 2 and El-Sayed M Farag 1 1 Basic Engineering Science Department, Faculty of Engineering, Menoufia University, Shibı ¯n al-Kawm, Egypt 2 Physics Department, Faculty of Science, Menoufia University, Shibı ¯n al-Kawm, Egypt Received: 06 June 2018 / Accepted: 07 March 2019 Abstract: Chalcogenide glasses with the chemical formula Se 80 Te 20-x In x (x = 5, 10 and 15) were prepared using the melt quenching method. The amorphous nature of the prepared samples was checked by X-ray diffraction analysis. The thermal behavior was investigated by using differential scanning calorimetry at different heating rates, 5, 10, 15 and 20 °C/min. Lasocka relation was used to study the heating rate dependence of the glass and crystallization temperatures. Kissinger and Mahadevan models were used to determine the glass and crystallization activation energies. The time dependence of the ac conductivity at 1 kHz performed at different annealing temperatures, 75, 80, 85 and 90 °C, was used to calculate Avrami exponent. The frequency factor was determined from the temperature dependence of the rate constant. Keywords: Kinetics; Chalcogenides; Glasses PACS Nos.: 61.05.cp; 81.70.Pg; 64.70.P- 1. Introduction Chalcogenide glasses are considered as functional materi- als due to their wide range of technological applications. Acousto-optic devices, IR optical fibers, photoreceptors, waveguides for IR evanescent wave sensors, phase change memories and many others are some of these applications [1–5]. SeTe alloys have special importance due to their distinct advantages. They have great hardness, good photo-sensi- tivity and little aging effects. However, limited reversibility and low crystallization temperatures are serious disadvan- tages in these glasses. These properties can be improved or overcome by adding third element as a chemical modifier [6]. The effect of Sn, Ga and Ge on the electrical and dielectric properties of SeTe was investigated [7–9]. The physicochemical and thermo-physical properties of Sb- doped SeTe were reported [10, 11]. Heat capacity and relaxation effects of SeTeCd were studied [12]. The role of Ag incorporation on the specific heat of glassy SeTe was examined [13]. Hardiness and thermal conductivity of SeTeAs were studied [14]. Crystallization kinetics of Pb, Zn and Bi doped SeTe glassy alloys was investigated [15–17]. The aim of this work is to study the transition kinetics of SeTeIn chalcogenides. 2. Experimental Chalcogenide samples with the chemical formula Se 80 Te 20-x In x (x = 5, 10 and 15) were prepared using the melt quenching method. Elements with purity of 99.999% were mixed according to their atomic percentages. The elements were weighed using a sensitive digital balance with accuracy of ± 1 mg. For each composition, the weighed elements were sealed in a silica glass tube with 8 mm diameter and about 20 cm length under vacuum of 1 mTorr. The ampoule was heated to 900 °C with rate of 5 °C/min and kept for 9 h. During heating, the ampoule was shaken frequently to obtain a homogeneous melt. The melt was finally quenched in an ice water to obtain a glassy state. The ingot was taken out by breaking the silica ampoule and then grinded gently with pestle and mortar to obtain a powder form. Part of the powder was pressed using a hydraulic press at pressure of 10 ton/cm 2 to pro- duce pellets. *Corresponding author, E-mail: ibrahimhasanafify@yahoo.com Indian J Phys https://doi.org/10.1007/s12648-019-01479-7 Ó 2019 IACS