Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors M. K. Petterson, H.F.-W. Sadrozinski, C. Betancourt SCIPP UC Santa Cruz, 1156 High Street, 95064 CA, USA M. Bruzzi, M. Scaringella, C. Tosi, A. Macchiolo INFN and Università di Firenze, Italy N. Manna, D. Creanza Università di Bari, Italy M. Boscardin, C. Piemonte, N. Zorzi ITC, IRST, Povo, Trento, Italy L. Borrello, A. Messineo INFN Pisa, Italy G. F. Dalla Betta Università di Trento Abstract The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance-voltage (C-V) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector. Good agreement between the reciprocal capacitance and the median collected charge is found when the frequency of the C-V measurement is selected such that it scales with the temperature dependence of the leakage current. Measuring C-V characteristics at prescribed combinations of temperature and frequency allows then a realistic estimate of the depletion characteristics of irradiated silicon strip detectors based on C-V data alone. 1. Introduction The main operational parameter of a silicon microstrip detector is the bias voltage dependence of the charge collected at the electrodes when a particle is traversing the device. For a minimum ionizing particle (mip), the number of electron/hole pairs is generated uniformly in the detector with 73 e/μm [1], and thus the most probable charge generated is linearly proportional to the thickness of the