Accepted Manuscript Two-dimensional analytical modeling for electrical characteristics of Ge/Si SOI-tunnel FinFETs S. Chander, S. Baishya, S. Kumar, P.K. Singh, K. Baral, M.R. Tripathy, A.K. Singh, S. Jit PII: S0749-6036(19)30174-0 DOI: https://doi.org/10.1016/j.spmi.2019.05.037 Reference: YSPMI 6149 To appear in: Superlattices and Microstructures Received Date: 25 January 2019 Revised Date: 2 May 2019 Accepted Date: 24 May 2019 Please cite this article as: S. Chander, S. Baishya, S. Kumar, P.K. Singh, K. Baral, M.R. Tripathy, A.K. Singh, S. Jit, Two-dimensional analytical modeling for electrical characteristics of Ge/Si SOI-tunnel FinFETs, Superlattices and Microstructures (2019), doi: https://doi.org/10.1016/j.spmi.2019.05.037. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.