Large-Scalable Graphene Oxide Films with Resistive Switching for Non-Volatile Memory Applications M. Brzhezinskaya a, *, O.O. Kapitanova b , O.V. Kononenko c , S. Koveshnikov c , V. Korepanov c , D. Roshchupkin c, ** a Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Str. 15, Berlin 12489, Germany b Department of Chemistry, Moscow State University, Moscow 119991, Russian Federation c Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka 142432, Russian Federation Corresponding authors: * Dr. habil. Maria Brzhezinskaya Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Str. 15, 12489 Berlin, Germany E-mail: maria.brzhezinskaya@helmholtz-berlin.de ** Prof. Dr. Dmitry Roshchupkin Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences Academician Ossipyan Str. 6 Chernogolovka 142432, Russian Federation E-mail: rochtch@iptm.ru ABSTRACT In the present work, it is demonstrated for the first time that a simple, specially developed method for graphene oxide (GO) deposition on large areas opens the prospects of GO’s wide application in planar-group technologies for creating different electronic devices including memristor devices for neuromorphic computing systems in the field of large data and artificial intelligence. MOS structures based on synthesized large-area GO films were formed, and their switching characteristics were studied. Current-voltage measurements performed on the MOS capacitors demonstrated forming-less, device's self-limited current behavior of GO bipolar resistive switching characteristics with the current density of up to 1 A/cm 2 . Multiple sharp transitions from the high resistance state to low resistance state in the pristine GO film under the DC voltage sweep may indicate formation of multiple conductive filaments that provide