Citation: Dahal, D.; Gumbs, G.;
Iurov, A.; Ting, C.-S. Plasmon
Damping Rates in Coulomb-Coupled
2D Layers in a Heterostructure.
Materials 2022, 15, 7964. https://
doi.org/10.3390/ma15227964
Academic Editors: Victoria
Samanidou and Eleni Deliyanni
Received: 9 October 2022
Accepted: 2 November 2022
Published: 11 November 2022
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materials
Article
Plasmon Damping Rates in Coulomb-Coupled 2D Layers
in a Heterostructure
Dipendra Dahal
1,
*, Godfrey Gumbs
2
, Andrii Iurov
3
and Chin-Sen Ting
1
1
Texas Center for Superconductivity and Department of Physics, University of Houston,
Houston, TX 77204, USA
2
Department of Physics and Astronomy, Hunter College, City University of New York, 695 Park Avenue,
New York, NY 10065, USA
3
Department of Physics and Computer Science, Medgar Evers College, City University of New York,
Brooklyn, NY 11225, USA
* Correspondence: hn6565@wayne.edu
Abstract: The Coulomb excitations of charge density oscillation are calculated for a double-layer
heterostructure. Specifically, we consider two-dimensional (2D) layers of silicene and graphene on
a substrate. From the obtained surface response function, we calculated the plasmon dispersion
relations, which demonstrate how the Coulomb interaction renormalizes the plasmon frequencies.
Most importantly, we have conducted a thorough investigation of how the decay rates of the plasmons
in these heterostructures are affected by the Coulomb coupling between different types of two-
dimensional materials whose separations could be varied. A novel effect of nullification of the
silicene band gap is noticed when graphene is introduced into the system. To utilize these effects for
experimental and industrial purposes, graphical results for the different parameters are presented.
Keywords: plasmon; graphene; silicene; heterostructure
1. Introduction
A huge number of researchers from various disciplines have been showing their inter-
est in new materials, silicene especially, after the development of its fabrication process in
2012 [1]. Because of its exceptional potential applications in electronic and optoelectronic
devices, many industries are making substantial investments to harness its properties.
Additionally, before making investments for commercial gain, both theoreticians and
experimentalists have been exploring this material for many years. A credit of foremost im-
portance goes to Takeda and Shiraishi [2], who, in 1994, dealt with the atomic and electronic
structure of the material for the first time. These authors calculated the band structure of
silicon in the corrugated stage having optimized atomic geometry. This work, though very
novel, did not receive the attention it deserves until 2004, when single-layer carbon atoms
named graphene were fabricated in the laboratory from graphite by Novoselov et al. [3].
Their research not only validated the stability of two-dimensional (2D) material but also
opened the door for new research on thin film materials, silicene being one of them.
Both silicene and graphene were studied in parallel. The former has a buckled crystal
geometry, whereas the latter has a honeycomb planar geometry. Due to this, differences
arise between them. Ab initio calculations showed that the bandgap of silicene is electrically
tunable [4–6], which is an advantageous property for designing a field effect transistor that
works at room temperature. Another distinct difference between these two materials is the
strength of the spin-orbital coupling (SOC), which is very weak in graphene. Consequently,
the quantum spin Hall effect occurs at extremely low temperatures [7,8]. In contrast to
this, silicene displays quantum spin Hall effect at temperature 18 K, far higher than that
for graphene.
Several investigations have been carried out on both graphene and silicene with
respect to transport phenomena [9–16], as well as their magnetic and electric field
Materials 2022, 15, 7964. https://doi.org/10.3390/ma15227964 https://www.mdpi.com/journal/materials